Using the ion impregnation technique, a large quantity of protons were impregnated into the monocrystal silicon chip. Observations made with a transmitting electronic microscope(TEM) and an optical microscope indicate that, when impregnating the protons into the chip, laminated defects have caused damages to the crystal lattices, and that, during the annealing process, protons have compounded into hydrogen molecules which are clustered together and cause huge inner pressure, giving rise to bubbles and pit and fractures on the surface. Annealing under a high temperature will easily cause escaping of hydrogen so as to reduce the internal pressure and reduce the sizes of the bubbles. Inside the proton-impregnated chips, inner fractures will occur after annealing at a low temperature. When annealing is carried out at a high temperature, however, cavities will occur, with noncrystalized inner walls.