A comprehensive review was made with regard to the current situation in studying the crystal growth, impurity behavior, defect control and surface quality of 300 silicon chips, as well as the advancement in development of silicon based materials. It concluded that the combination of strained silicon with silicon on insulation (SOI) would be a trend for future development. The foundation and hope for vigorous development in electronic industries would lie in silicon for nanometer grade integrated circuits and silicon-based materials.